The working principle of field-effect transistors can be summarized as follows: "The ID flowing through the channel between the drain and source is controlled by the reverse bias gate voltage formed by the pn junction between the gate and the channel.
Categories：Product knowledge Date：2024-11-16 Hits：363 View »
B5819WS SOD-323 YuFeng Microelectronics, original manufacturer of diodes, high-voltage diodes, surface mount diodes, fast recovery diodes, Schottky diodes, low voltage drop Schottky diodes, field-effect transistors, MOSFETs, MOSFET manufacturers, MOSFET production, fast recovery bridge stack, inverter rectifier bridge, rectifier bridge, ESD electrostatic tube, TSS solid-state discharge tube, TVS diode - YuFeng Microelectronics
Categories：Product Subsitution Date：2024-11-16 Hits：324 View »
The main characteristic of a diode is its unidirectional conductivity, which means that under the action of forward voltage, the on resistance is very small; Under the action of reverse voltage, the on resistance is very large or infinite.
Categories：Product knowledge Date：2024-11-16 Hits：429 View »
Determine gate G: Set the multimeter to the R × 1k position, connect any negative electrode of the multimeter to one electrode, and sequentially touch the other two electrodes with the other probe to measure their resistance.
Categories：Product knowledge Date：2024-11-16 Hits：398 View »
YFWG290N10TL TOLL YuFeng Microelectronics, original manufacturer of diodes, high-voltage diodes, surface mount diodes, fast recovery diodes, Schottky diodes, low voltage drop Schottky diodes, field-effect transistors, MOSFETs, MOSFET manufacturers, MOSFET production, fast recovery bridge stack, inverter rectifier bridge, rectifier bridge, ESD electrostatic tube, TSS solid-state discharge tube, TVS diode - YuFeng Microelectronics
Categories：Product Subsitution Date：2024-11-16 Hits：394 View »
Active and passive components
Categories：Product knowledge Date：2024-11-16 Hits：347 View »
The main reason is that the semiconductor types of each pole are different. The E, B, and C poles of PNP transistors are P-type, N-type, and P-type semiconductors, respectively, while NPN transistors are exactly the opposite.
Categories：Product knowledge Date：2024-11-16 Hits：423 View »
The reasons and solutions for MOS transistor breakdown are as follows
Categories：Product knowledge Date：2024-11-16 Hits：357 View »
The reasons and solutions for MOS transistor breakdown are as follows
Categories：Product knowledge Date：2024-11-16 Hits：396 View »
In actual projects, we mostly use enhanced models.
Categories：Product knowledge Date：2024-11-16 Hits：348 View »
